FIELD: light-to- electricity conversion. SUBSTANCE: converter has electrodes 4, 5, first and second extreme photosensitive semiconductor layers 1, 3 of reverse polarity of conductivity contacting them, and intermediate semiconductor transport element 2 placed in- between in proportion complying with equations Eg2< Eg3, Eg1< Eg3, α2d2< 0,1, l2> d2 and one of equations Ec1-Ec2≥ 0, Ev1-Ev2≥ 0, first one being used to form p-type layer 1 and n- type layer 3; other equation is employed to form layers whose polarity of conductivity is reverse to that above-mentioned. In these equations Eg1, Eg3, Eg2 are widths of forbidden gaps of layers 1, 3, and layer of intermediate element 2, respectively; Ec1 and Ec2 are electron energies at bottom of conduction band of layer 1 and layer of intermediate element 2, respectively; Ev1 and Ev2 are energies of holes at ceiling of valence band of same layers, respectively; α2d2 is, respectively, coefficient of light absorption in layer material of intermediate element 2 and thickness of this layer; l2 is free path length of carriers in it. EFFECT: increased short-circuit current due to additional generation of electron-hole pairs under shock ionization conditions. 11 cl, 3 dwg, 1 ex
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Authors
Dates
1999-09-10—Published
1995-12-07—Filed