MULTIPLE-JUNCTION PHOTOELECTRIC DEVICE Russian patent published in 2015 - IPC H01L31/72 B82B1/00 

FIELD: physics, photography.

SUBSTANCE: multiple-junction photoelectric device comprises first and second electrodes, a photoelectric stack in electrical contact with said first and second electrodes and having a plurality of photoelectric junctions, wherein each said photoelectric junction includes an electron-acceptor semiconductor layer and a light-absorbing semiconductor layer, having a substantially high work function than said electron-acceptor semiconductor layer, wherein said photoelectric junctions are divided by a recombination region which includes a transparent and current-conducting hole layer in ohmic contact with said light-absorbing semiconductor layer of said first photoelectric junction, and a transparent current-conducting electron-acceptor layer in ohmic contact with said electron-acceptor semiconductor layer of said second photoelectric junction; said recombination region forms a gradient work function of said transparent and current-conducting hole layer in ohmic contact with said light-absorbing semiconductor layer of said first photoelectric junction to said transparent and current-conducting electron-acceptor layer in ohmic contact with said electron-acceptor semiconductor layer of said second photoelectric junction, and having thickness in the range of one order of the sum of the Debye length of all layers of said recombination region.

EFFECT: invention improves the conversion efficiency of photoelectric cells by providing a low-energy path for recombination of electron and hole currents from pairs of photoelectric junctions.

33 cl, 10 dwg, 6 tbl