GAS SEPARATION MEMBRANE WITH SILICON DIOXIDE-BASED LAYER DOPED WITH TERVALENT ELEMENT Russian patent published in 2011 - IPC B01D71/02 B01D53/22 

Abstract RU 2418622 C2

FIELD: process engineering.

SUBSTANCE: invention relates to membrane technologies. Proposed method comprises applying doped silicon dioxide sol film onto porous substrate and thermal treatment of thus applied film. Note here that said sol is produced in hydrolysis of silicon alkoxide in the presence of doping amount of boron oxide. Membranes thus produced are intended for extraction of helium or hydrogen to be used for removing admixtures from helium flows.

EFFECT: production of selective membrane suitable for use at high temperatures.

19 cl, 2 ex

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RU 2 418 622 C2

Authors

Zhjul'B Anna

Kot Did'E

Sala Biatris

Barbua Kamelija

Dates

2011-05-20Published

2006-12-22Filed