FIELD: process engineering.
SUBSTANCE: invention relates to machining of sapphire substrate. Proposed method comprises grinding first surface of said substrate using first bonded abrasive, grinding second substrate surface, opposite the first one, and grinding said first surface using second abrasive other than first one. Note here that second bonded abrasive features smaller grain size than first one. Note also that second abrasive is self-conditioning abrasive.
EFFECT: higher quality of plates with higher crystallographic parameters.
15 cl, 5 dwg, 6 tbl
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Authors
Dates
2011-06-27—Published
2007-12-21—Filed