FIELD: machine building.
SUBSTANCE: here is disclosed sapphire substrate with flat surface and crystallographic orientation chosen from group including orientation in a-plane, r-plane, m-plane and c-plane. Also, this substrate has nTTV approximately not over 0.037 mcm/cm2, nTTV corresponds to change of total thickness normalised relative to area of flat surface. The substrate has approximate diametre not less, than 9.0 cm.
EFFECT: production of substrates of high quality with large surface areas.
15 cl, 6 tbl, 5 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| LOT OF SAPPHIRE SUBSTRATES AND METHOD OF ITS PRODUCTION | 2007 |
|
RU2412037C1 |
| METHOD OF MACHINING SAPPHIRE SUBSTRATE | 2007 |
|
RU2422259C2 |
| METHOD OF VARYING MONOCRYSTALLINE BODY CRYSTALLOGRAPHIC ORIENTATION (VERSIONS) AND DEVICE TO THIS END | 2008 |
|
RU2440885C2 |
| METHOD OF TREATMENT OF CERAMIC SUBSTRATE (VERSIONS) | 2004 |
|
RU2292372C2 |
| ABRASIVE PRODUCT | 2006 |
|
RU2361719C2 |
| FLEXIBLE ABRASIVE TOOL AND METHOD OF FABRICATING ABRASIVE POWDER | 2008 |
|
RU2426635C2 |
| METHOD OF PRODUCING ABRASIVE PRODUCTS | 2006 |
|
RU2358854C1 |
| MANUFACTURING METHODS OF ABRASIVE ITEMS | 2006 |
|
RU2376128C2 |
| GREASING-RESISTING AGENT FOR ABRASIVE | 2001 |
|
RU2246392C1 |
| POLISHING COMPOSITION | 2014 |
|
RU2646938C2 |
