LOT OF SAPPHIRE SUBSTRATES AND METHOD OF ITS PRODUCTION Russian patent published in 2011 - IPC B24B7/22 B24B37/04 H01L21/20 

FIELD: process engineering.

SUBSTANCE: invention relates to grinding of sapphire substrates. Proposed method comprises grinding every sapphire substrate using abrasive material so that first surface is oriented in c-plane. Lot of sapphire substrates comprises, at least, 20 substrates. Note here that each substrate has first surface with (i) orientation in c-plane, (ii) angle (θ_m) of disorientation of crystallographic m-plane and (iii) angle (θ_a) of disorientation of crystallographic a-plane. Note also that at least one (a) standard deviation of σ_m of said angle θ_m does not approximately exceed 0.0130 degrees, or (b) standard deviation σ_a of angle θ_a does not approximately exceed 0.0325 degrees.

EFFECT: higher surface quality.

15 cl, 5 dwg, 6 tbl