METHOD OF MAKING OHMIC CONTACT TO GaAs BASED ON THIN Ge AND Cu FILMS Russian patent published in 2011 - IPC H01L21/28 

FIELD: physics.

SUBSTANCE: method of making an ohmic contact to GaAs based on thin Ge and Cu films involves formation a mask on the surface of an n-GaAs wafer in order to perform lift-off lithography, deposition of thin Ge and Cu films onto the surface of the n-GaAs wafer, first thermal treatment in a single vacuum cycle with the deposition process, removing the n-GaAs wafer from the vacuum chamber, removing the mask and second thermal treatment. First thermal treatment is carried out in an atmosphere of atomic hydrogen at temperature 150-460°C and hydrogen atom flux density on the surface of the n-GaAs wafer equal to 10¹³-10¹⁶ at.cm² s^-1.

EFFECT: low value of the reduced contact resistance of the ohomic contacts made.

4 cl, 1 dwg