METHOD OF MAKING PHOTOELECTRIC CONVERTER BASED ON GERMANIUM Russian patent published in 2009 - IPC H01L31/18 

FIELD: physics; semiconductors.

SUBSTANCE: at making a photoconverter on an n-type germanium substrate, a passivating GaAs layer is grown through low-temperature liquid-phase epitaxy with fast cooling of the solution-melt. A dielectric film is deposited on the face of the substrate. Throug chemical etching, windows are made in the dielectric film, corresponding to the topology of the p-n junction. The GaAs layer and the Ge surface layer are doped by diffusing zinc from the gaseous phase in a quasiclosed container. The p-n junction at the back of the substrate is removed. Back and front contacts are deposited and calcined. The structure is divided into separate photo cells by etching and an antireflection coating is deposited.

EFFECT: making germanium photoconverters with high values of photocurrent and open circuit voltage using a simple, safe and cheap method.

13 cl, 3 dwg, 1 ex