FIELD: microelectronics.
SUBSTANCE: invention relates to the microelectronic technologies; the essence of the invention is as follows: the transistor on the basis of the semiconducting compound made of the semiconducting wafer with the channel layer and contact layer includes the gate, ohmic contacts of the source and drain as well as air-lifts; the ohmic contact is made on the basis thin-film composition of Ge and Сu located on the surface of the semiconducting wafer with a general thickness of 50 - 500 nm and weight content of Ge in the composition counting to 20-45%.
EFFECT: reduction of the production cost of transistors manufactured on the basis of semiconducting compounds due to adoption of metal coating not containing precious metals.
9 cl, 4 dwg
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