FIELD: electricity.
SUBSTANCE: transistor based on a semiconductor compound comprises a semiconductor plate, a channel and a contact layers, ohmic contacts of a source and a drain, made on the basis of a thin-film compound of Ge and Cu, and a gate, where thin films of barrier-forming metal, a diffusion barrier and a conductor are installed in layers on a semiconductor plate. The gate conductor material is a thin-film compound of Ge and Cu with thickness of 10-1,000 nm, with mass content of Ge in the range of 20-45%.
EFFECT: higher thermal stability of gate parameters, lower value of reduced contact resistance of ohmic contacts of a source and a drain.
6 cl, 6 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| THE TRANSISTOR ON THE BASIS OF THE SEMICONDUCTING COMPOUND | 2010 |
|
RU2442243C1 |
| MICROWAVE TRANSISTOR | 2013 |
|
RU2540234C1 |
| METHOD OF FORMING T-SHAPED GATE | 2017 |
|
RU2686863C1 |
| METHOD TO MANUFACTURE Cu-Ge OHMIC CONTACT TO GaAs | 2010 |
|
RU2436184C1 |
| MONOLITHIC INTEGRATED CIRCUIT BASED ON SEMICONDUCTOR COMPOUND | 2015 |
|
RU2601203C1 |
| METHOD OF MAKING MULTILAYER OHMIC CONTACT TO n-GaAs | 2009 |
|
RU2407104C1 |
| METHOD OF MAKING OHMIC CONTACT TO GaAs BASED ON THIN Ge AND Cu FILMS | 2009 |
|
RU2422941C2 |
| METHOD OF INCREASE OF CONTROL VOLTAGE ON THE GATE OF THE GAN TRANSISTOR | 2017 |
|
RU2669265C1 |
| METHOD OF MAKING OHMIC CONTACT TO ALGAN/GAN | 2018 |
|
RU2696825C1 |
| METHOD OF FORMING A SUBMICRON T-SHAPED GATE | 2019 |
|
RU2724354C1 |
