FIELD: physics.
SUBSTANCE: method of obtaining a thin-film copper-germanium joint involves successive deposition of Ge and Cu layers on the surface of a plate and forming a thin-film copper-germanium joint which is carried out over a time t≥0.5 minutes in an atmosphere of atomic hydrogen at temperature T=20-120°C and hydrogen atom flux density on the surface of the plate equal to 1013-1016 at.cm-2 s-1.
EFFECT: lower temperature and shorter time for obtaining a thin-film copper-germanium joint.
7 cl, 6 dwg
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