MICROWAVE TRANSISTOR Russian patent published in 2015 - IPC H01L29/78 B82B1/00 

FIELD: electricity.

SUBSTANCE: invention relates to the method of obtaining of monolithic integrated circuits on the basis of semiconductor compound A^IIIB^V, in particular, to creation of microwave transistors, in which the content of precious metals is minimised. The microwave transistor implemented on the basis of semiconductor plate with channel and contact layers, comprises ohmic contacts of the source and sink, and a gate containing barrier-forming, conductive and passivating layers. The ohmic contacts of the source and sink are implemented on the basis of Pd, Ge and Al thin films with the total thickness 5-500 nm, and barrier-forming, conductive and passivating layers of the gate are implemented on the basis of Ti thin films with the thickness 10-200 nm, Al with the thickness 5-1000 nm, Ti with the thickness 10-1000 nm respectively.

EFFECT: improvement of reliability of operation due to improvement of thermal stability of the device performance.

8 cl, 13 dwg