CRYSTALLISER FOR TREATMENTS OF MELTED SILICON AND PROCEDURE FOR ITS FABRICATION Russian patent published in 2011 - IPC C30B15/10 C30B11/00 C30B29/06 F27B14/10 

FIELD: metallurgy.

SUBSTANCE: crystalliser consists of main case with surface of base and side walls forming internal volume. According to the present invention the main case contains at least 65 % in weight of silicon carbide and from 12 % to 30 % in weight of a component chosen from the group including silicon dioxide or nitride. Notably, the main case contains at least one cover out of dioxide and/or nitride of silicon at least of surfaces forming internal volume of the crystalliser. As main component of the crystalliser there is used silicon carbide with crystallographic phase not subjected to phase transformation at temperature of melted silicon treatment, which facilitates solving the problem of uniformity loss of transfer/withdrawal of energy existent in common crystallisers. Additionally, silicon carbide does not have plastic phases under such temperature and consequently, is not subjected to deformation.

EFFECT: repeated usage of crystalliser without visible deterioration of its physical integrity.

9 cl, 1 tbl