RADIATION DETECTOR Russian patent published in 2014 - IPC H01L31/09 B82B1/00 

FIELD: nanotechnology.

SUBSTANCE: radiation detector is provided with transparent contact elements and contact elements of the base, between which the array of nanoheterostructural elements is located, formed by donor semiconductor layers between which the absorbing semiconductor layer is located. The array of the nanoheterostructural elements is formed in the pores of the aluminium oxide matrix with a pore diameter of 40 to 150 nm. The donor semiconductor layers and the absorbing semiconductor layer form a structure of narrow-gap semiconductor/wide gap semiconductor/narrow-gap semiconductor. The donor semiconductor layers are made of Ge, the absorbing semiconductor layer is made of ZnSe_(1-x)S_x. The contact elements of the base are used as nickel, or silver, or indium-tin oxide, the transparent contact elements are used as the film indium-tin oxide. The base is used as the substrate of Si. The distance between the contact elements of the base is from 1 to 10 microns.

EFFECT: improving the accuracy of the positioning devices in which ultra-small movements are implemented: scanning atomic-force and tunnelling microscopes, micro-and nanoeducators, high accuracy of recording the movement.

7 cl, 4 dwg