FIELD: physics.
SUBSTANCE: invention relates to semiconductor diagnosis equipment, crystallography and petrography, particularly to analysis of crystalline nanosize heterostructures using an electron tomography with controlled coherency, which enables non-contact determination of the thickness and number of inter-planar atomic nanolayers of semiconductor crystalline heterostructures and mapping crystal orientation in order to investigate dynamic processes and phase transitions.
EFFECT: possibility of determining local inter-atom parameters of heterolayers in crystals while probing electron density waves with an electron beam with controlled coherency.
1 cl, 3 dwg
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