FIELD: process engineering.
SUBSTANCE: invention relates to plasma processing of surface inside hollow body. Proposed method comprises several stages. First, hollow body 4 is filled with process gas. Hollow body has one wall made from dielectric material. Gas permeability is ensured by sealing hollow body 4. Then, hollow body is fed into gap 5 between at least two electrodes 1, 2. Gas permeability is ensured by sealing hollow body. External pressure of at least 0.05 MPa (0.5 bar) prevails in space 5, outside said hollow body. External pressure of at least 0.05 MPa (0.5 bar) prevails in internal chamber of hollow body. Gap 5 between electrodes 1, 2 is filled with gas. Gas requires higher field intensity for ignition in the case of external pressure compared with process gas in the case of internal pressure. External pressure does not exceed internal pressure. Plasma if fired inside hollow body on applying sufficiently high AC voltage in between electrodes a and 2.
EFFECT: simplified method.
22 cl, 5 dwg
Title | Year | Author | Number |
---|---|---|---|
PLASMA SYSTEM | 2008 |
|
RU2476953C2 |
METHOD AND DEVICE FOR THERMO-CHEMICAL HARDENING OF PARTS | 2014 |
|
RU2687385C2 |
IGNITION PLUG | 2015 |
|
RU2696718C2 |
OBJECT TREATING METHOD AND APPARATUS | 1995 |
|
RU2067003C1 |
METHODS OF INSPECTION OF GAS EMISSION VESSELS | 2011 |
|
RU2561759C2 |
GAS RELEASE PROCESS FOR INSPECTION OF COATED SURFACES | 2010 |
|
RU2523773C2 |
PLASMA TREATMENT OF SURFACE USING DIELECTRIC BARRIER DISCHARGES | 2007 |
|
RU2462534C2 |
METHOD FOR CONDUCTING SELF-SUSTAINED LOW-TEMPERATURE PLASMA MOLECULAR SYNTHESIS AND APPARATUS FOR REALISING SAID METHOD | 2009 |
|
RU2428823C2 |
PECVD-COATING WITH APPLICATION OF ORGANOSILICON PRECURSOR | 2010 |
|
RU2550452C2 |
METHOD OF PLASMA CHEMICAL DEPOSITION FROM GASEOUS PHASE ON INNER SURFACE OF HOLLOW ITEM | 2007 |
|
RU2446230C2 |
Authors
Dates
2011-08-20—Published
2007-07-19—Filed