PRODUCTION OF SILICON IN FLUIDISED BED REACTOR WITH USE OF TETRACHLOROSILANE FOR DECREASING SEDIMENTATION AT REACTOR WALLS Russian patent published in 2014 - IPC B01J8/24 C01B33/03

Abstract RU 2518613 C2

FIELD: process engineering.

SUBSTANCE: invention relates to method of silicon production. Proposed method comprises feed of etching gas nearby the walls of fluidised bed reactor. Etching gas consists of, in fact, tetrachlorosilane. Siemens reactor can be incorporated with this process so that its exhaust gases are used as initial gas and/or etching gas to be fed to fluidised bed reactor.

EFFECT: ruled out silicon sedimentation at fluidised bed reactor walls.

20 cl, 3 dwg

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RU 2 518 613 C2

Authors

Molnar Majkl

Dates

2014-06-10—Published

2009-10-12—Filed