SEMICONDUCTOR PRESSURE GAGE WITH FREQUENCY OUTPUT SIGNAL Russian patent published in 2011 - IPC G01L9/00 

FIELD: physics.

SUBSTANCE: pressure gage comprises transducer consisting of housing, membrane with meander-shaped strain gages that make branches of strain bridge, frequency converter comprising comparator and integrator arranged on operating amplifier with first capacitor in negative feedback circuit. Inverting input of operating amplifier is connected via second capacitor with first apex of strain bridge feed diagonal and, via first resistor of integrator, with one of apices of strain bridge measuring diagonal. Another apex is connected to non-inverting input of operating amplifier of integrator and to comparator second input. Besides, proposed pressure gage comprises additionally second resistor of integrator and second strain bridge with its feed diagonal apex connected to comparator output and second apex connected with bus "earth". Branches of second strain bridge also represent meander and are fitted in identical branches of first strain bridge.

EFFECT: higher accuracy and reliability.

6 dwg