SEMICONDUCTOR HIGH-PRECISION ABSOLUTE PRESSURE SENSOR Russian patent published in 2012 - IPC G01L9/04 

FIELD: physics.

SUBSTANCE: semiconductor high-precision absolute pressure sensor has a semiconductor sensitive element in form of a square-shaped plane (100) silicon monocrystal, having a base and a membrane on which tensoresistors are formed from tensoelements. The centres of the tensoresistors lie at a distance l from perpendicular axes Ox and Oy, brought through the centre of the membrane and parallel to the boundaries of the thin part of the membrane with the base of the semiconductor sensitive element, which is determined from the relationship: l=0.715L, where L is the distance from axes Ox and Oy to the boundary of the thin part of the membrane with the base of the semiconductor sensitive element. The tensoresistors also lie on both sides of the axes Ox and Oy at distance h≤0.1L, wherein the tensoresistors which are normal to the axis Ox occupy the same area as tensoresistors which are normal to the axis Oy.

EFFECT: high measurement accuracy through improved linearity of the output characteristic owing to the arrangement of the tensoresistors.

9 dwg