METHOD OF DETERMINING IONISATION ENERGY OF DEEP LEVELS IN SEMICONDUCTOR BARRIER STRUCTURES AND DEVICE FOR REALISING SAID METHOD Russian patent published in 2011 - IPC H01L21/66 G01R31/26 

FIELD: physics.

SUBSTANCE: sample of a semiconductor barrier structure is put into a measurement cell. Temperature dependency of relaxation time upon external action of reverse-bias voltage pulses with amplitude V₁ is determined. The signal obtained from the sample is multiplied by a reference signal F(t). Selection based on relaxation time is carried out and the maximum output voltage ΔU and temperature of the maximum of the spectrum peak DLTS (T_max) is determined. An additional reverse-bias voltage pulse with amplitude V₂>V₁ is used, where |V₂-V₁| >>k T_max/e. Two amplitude values of spectrum peaks DLTS ΔU₁ and ΔU₂ which correspond to the same constant relaxation time and different amplitude of the reverse-bias voltage V₁ and V₂ are determined. The ionisation energy of the deep level (AE) is determined using the disclosed formula. The device which realises this method has a square-pulse generator of an irregular shape connected to a deep level relaxation spectroscopy device with possibility of varying temperature of the analysed sample.

EFFECT: improved method and device.

2 cl, 2 dwg