FIELD: semiconductor engineering; local check-up of deep center parameters. SUBSTANCE: semiconductor strip under check is placed between two conducting plates one of which is transparent plate, nonequilibrium potential difference is set up across barrier junction by irradiating semiconductor plate through transparent plate with electromagnetic rays and generating photoelectromotive force. Data on relaxation processes are taken by using capacitive coupling between plates and surfaces of semiconductor strip. Tp ensure desired locality, electromagnetic radiation is recorded. In case of semiconductor strips of uniform thickness (such as half-insulating substrates), surface-to-volume semiconductor junction is used as barrier junction. In implementing this method, it will be most natural to irradiate semiconductor strip with square-wave pulses of electromagnetic radiation of fixed intensity and then to determine amplitude and waveform of pulses across conducting plates; parameters of relaxation processes should be between calculated according to parameters of pulses across plates. EFFECT: facilitated procedure. 4 cl, 3 dwg
