METHOD OF METAL AND SEMICONDUCTOR FORMING USING ELECTRO PLASTIC EFFECT Russian patent published in 2011 - IPC B21B1/00 

FIELD: process engineering.

SUBSTANCE: invention relates to metal and semiconductor forming. Proposed method comprises metal forming with application of pulsed electric field for plastification and reduction of material strain resistance. Note here that short pulses of electric field are applied to billet. Pulse duration approximates to dielectric Maxwell relaxation interval defined by relation Θ_m=ε₀ερ/4π, where ε₀ is dielectric coefficient of vacuum equal to 8.85418×10^-14 (S.s/Vcm), ε is relative dielectric factor of material, ρ is material specific resistance, (Ohm cm), while field intensity varies from tens to hundreds of V/cm. This causes polarisation of dislocations in surface near-surface layers of processed material and their orientation along electric field lines.

EFFECT: electric plastification, reduced resistance of material and power savings.

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