MAGNETORESISTIVE SENSOR Russian patent published in 2011 - IPC H01L43/08 B82B1/00 

FIELD: electricity.

SUBSTANCE: magnetoresistive sensor comprises a contains a substrate with a dielectric layer whereon there is a non-magnetic low-resistive bridge joint comprising four thin-film magnetoresistive strips each containing upper and lower layers between which there are two ferromagnetic films with an easy magnetic axis along the length of the thin-film magnetoresistive strip between which there is a separation layer; the thin-film magnetoresistive strips are coated with a first insulation layer whereon there is a control conductor with working parts located above the thin-film magnetoresistive strips along each strip; there are also a second insulation layer and a protective layer; a blanket hard magnetic film is formed with its coercitive force at least three times exceeds a magnetic anisotropy field of the ferromagnetic film; magnetisation vectors of the hard magnetic film in the neighbouring arms of the bridge joint are perpendicular to the easy magnetic axis and antiparallel to each other.

EFFECT: in the magnetoresistive sensor, current in the control conductor is decreased manifold that essentially improves its technical characteristics due to reduced power consumption and heat, and also enabled use of such magnetoresistive sensor in a ruler or a sensor array.

3 cl, 2 dwg