MAGNETORESISTIVE SENSOR Russian patent published in 2011 - IPC H01L43/08 

FIELD: physics.

SUBSTANCE: magnetoresistive sensor has a substrate with a dielectric layer on which there are four rows of thin-film magnetoresistive strips connected into a bridge circuit by nonmagnetic low-resistance jumpers, said strips being arranged linearly and series-connected by said jumpers and each having bottom and top protective layers between which there is a magnetically soft film, a first insulating layer on top of the thin-film magnetoresistive strips, on which a control conductor is formed with working parts lying above the thin-film magnetoresistive strips along each of the rows and connected in form of a meander, a second insulating layer, a planar coil whose working parts lie along the easy magnetic axis and a protective layer, wherein thin-film magnetoresistive strips in two neighbouring rows lie at an angle of 45° relative the easy magnetic axis, and in two other neighbouring rows - at an angle of -45° relative the easy magnetic axis, where opposite arms of the bridge circuit are respectively two outer and two inner rows of the magnetoresistive strips, and there is a magnetically hard film on the surface of the control conductor.

EFFECT: obtaining a magnetoresistive sensor with optimum direction of the magnetisation vector of the ferromagnetic film in the thin-film magnetoresistive strip, which increases sensitivity of the sensor and linearity of its volt-oersted characteristics.

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