METHOD FOR METALLISATION OF THROUGH HOLES IN SEMI-INSULATING SEMICONDUCTOR SUBSTRATES Russian patent published in 2019 - IPC H01L21/288 

FIELD: electronic engineering.

SUBSTANCE: invention relates to electronic engineering and is intended to create discrete semiconductor devices and integrated circuits using three-dimensional 3D integration by electrically connecting their metal structural elements through metal-coated holes with reverse metallized sides of semi-insulating semiconductor substrates. Method for metallization of inner surfaces of through holes in semiconductor structures includes formation on front side of surface of semiconductor structure of metal structures, thinning from the back side of the semiconductor semi-insulating substrate carrier, application of the mask with the windows of the specified shape and size opposite to the metal structures, etching in semiconductor semi-insulating substrate along applied mask through holes with positive, vertical or negative inclination of walls to located on opposite side of metal structures and metallization of back side of substrate. Metallization of inner surface of through holes with ratio of hole depth to its diameter h/D>3 is carried out by lateral (side) electrochemical refilling of inner surface of hole with metal film without application of adhesive or seed layers, using electrochemical deposition of metal from electrolyte with cathode potential U_c<ϕ_b, where ϕ_b is the height of the Schottky barrier in metal-semiconductor contact formed at electrochemical deposition, followed by electrochemical thickening of the metal film.

EFFECT: invention enables to obtain continuous and homogeneous through-thickness inner surface of through holes.

1 cl, 3 dwg