MONOLITHIC INTEGRATED CIRCUIT BASED ON SEMICONDUCTOR COMPOUND Russian patent published in 2016 - IPC H01L27/04 

FIELD: microelectronics.

SUBSTANCE: invention relates to production of monolithic integrated circuits (MIS) based on semiconductor compounds of A^IIIB^V. Device has a semiconductor plate with an active layer containing a channel and a contact layers, including active and passive elements made on the basis of ohmic contacts, gates, lower coating of capacitors, a resistive layer, metalization of the first, the second and the third levels, first, second, third and fourth layers of the protective dielectric, through holes and metalization of the reverse side. Metalization of the first, the second layer and the reverse side is made on the basis of Cu, and of the ohmic contacts and the gates - is based on Al.

EFFECT: invention ensures production of MIS based on semiconductor compounds of A^IIIB^V with lower cost of manufacture owing to the use of metalization, in which the content of precious metals is minimized, according to a process interoperable with Si microelectronics technology, for formation of modern devices of hetero-integrated electronics.

18 cl, 15 dwg