SOLAR PHOTOELECTRIC SUBMODULE Russian patent published in 2012 - IPC H01L39/22 B82B1/00 

FIELD: microelectronics.

SUBSTANCE: essence of the invention is as follows: superconducting spin gate comprises the superconducting film with the structure installment thereon to operate the critical temperature of the superconducting film consisting of the first layer adjoined to the superconducting film and the second layer of the ferromagnetic divided by the layer made of the non-ferromagnetic material; the first layer of the ferromagnetic located directly on the superconducting film securing the galvanic contact with the latter; the layer of the non-ferromagnetic is coated on the surface of the second layer of the ferromagnetic with the possibility of fixing the vector of magnetization of the second layer and reversing of the vector of magnetization of the first layer of the ferromagnetic and generation of the maximum amplitude of the triplet superconducting component in the region of the non-ferromagnetic layer and maximum of the singlet component - in the superconducting film; the angle of turn of the vector of magnetization is specified within the interval of values securing herewith alteration of the critical temperature of the superconducting film from the final to the nil value.

EFFECT: invention is designated to suppress via the operating element to the best possible effect the critical temperature of the superconducting film under the noncollinearity of direction of the vectors of the intensity of magnetization of ferromagnetic layers.

9 cl, 6 dwg