HIGH-FREQUENCY SUPERCONDUCTING MEMORY ELEMENT Russian patent published in 2015 - IPC H01L39/22 

FIELD: electricity.

SUBSTANCE: high-frequency superconducting memory element having planar, end face or bridge geometry consists of two superconducting electrodes and a region of weak interconnection, which includes magnetic layers with direct, tunnel or resonant conductivity and a superconducting layer between them. Difference from previously known Josephson SFS structures consists in the fact that at variation of direction of magnetisation of one of the magnetic layers in a superconducting film localised in the region of weak interconnection between magnetic layers a phase transition from a normal state to a superconducting state or from a superconducting state to a normal state occurs.

EFFECT: increase of variation of an amplitude of critical transition current under action of a low magnetic flux in comparison to previous geometries, which provides possibilities for miniaturisation of superconducting memory elements, as well as a possibility of rather high specific feature of a Josephson heterostructure, and as a result, rather high quick action of a memory element on its basis.

16 cl, 6 dwg