METHOD OF MAKING DEVICE WITH SUBMICRON JOSEPHSON π-CONTACT Russian patent published in 2016 - IPC H01L39/22 B82B3/00 

FIELD: chemistry.

SUBSTANCE: invention can be used for making a device with a submicron Josephson π-contact. Present invention consists in that method of making device with a submicron Josephson πcontact comprises using as weak interconnection of Josephson junction, a single nanowire, formed from a series of alternating magnetic and nonmagnetic sections so that magnetic section has submicron dimensions in all directions X, Y, Z, where Z is directed along nanowire and non-magnetic sections are made of superconducting material or from normal metal long coherence lengths ξ_N, that is placed horizontally on a substrate and fed to non-magnetic sections of superconducting contacts.

EFFECT: technical result is achieving high electrophysical parameters.

10 cl, 2 dwg