METHOD OF PURIFYING SILICON Russian patent published in 2012 - IPC C01B33/37 C30B29/06 

FIELD: chemistry.

SUBSTANCE: invention relates to the technology of obtaining pure silicon (polycrystalline, monocrystalline, granular and/or rods thereof), used in making solar collectors or integrated circuits. One method of purifying silicon involves obtaining a first melt from silicon and a solvent - a metal selected from: copper, tin, zinc, antimony, silver, bismuth, aluminium, cadmium, gallium, indium, magnesium, lead, alloys thereof as well as combinations thereof; bringing the first melt into contact with a first gas to obtain dross and a second melt; separating the dross and the second melt; cooling the second melt to form primary silicon crystals and a first mother solution; separating the primary silicon crystals and the first mother solution.

EFFECT: obtaining industrial amounts (eg, at least 1000 tons/year) of pure silicon at a relatively low cost.

86 cl, 7 dwg, 5 tbl, 4 ex