FIELD: chemistry.
SUBSTANCE: invention can be used to produce semiconductor compounds. Phosphorus trichloride undergoes gas-phase thermal treatment at temperature 350-450°C on inorganic oxide sorbents modified with rare-earth elements. The obtained vapour is condensed and the condensate undergoes rectification purification. Further, the liquid rectificate undergoes microfiltration at temperature -85 - (-90°C) on polymer microfilters with pore size in the range of 0.2-0.5 mcm. The filtrate is evaporated in bubble free boiling conditions and the vapour phase is purified through microfiltration at temperature 75 - 95°C. The inorganic oxide sorbents used are sorbents based on aluminium oxide and silicon oxide, modified with rare-earth elements.
EFFECT: method provides fine purification of phosphorus trichloride and enables to obtain a product containing impurities of several elements, eg, aluminium, gallium, iron, selenium and sulphur, each in amount of 1×10-7 - 10-8 wt %.
3 cl, 3 ex
Title | Year | Author | Number |
---|---|---|---|
METHOD OF PURIFYING LIQUIDS, VOLATILE ALKYLSILOXANES AND ALKYLSILAZANES | 2010 |
|
RU2447078C1 |
METHOD OF PURIFYING TETRAMETHOXYSILANE | 2011 |
|
RU2463305C1 |
METHOD OF PURIFYING ACETIC ACID | 2010 |
|
RU2440969C1 |
METHOD OF TETRAETHOXYSILANE PURIFICATION | 2013 |
|
RU2537302C1 |
METHOD FOR DEEP PURIFICATION OF MONOSILANE | 2009 |
|
RU2410326C2 |
METHOD FOR PROCESSING OF HIGH MOLECULAR CARBON-BEARING RAW MATERIAL INTO LIGHTER HYDROCARBONS | 2008 |
|
RU2381256C1 |
METHOD FOR PRODUCTION OF ARSENIC TRICHLORIDE | 1993 |
|
RU2054382C1 |
METHOD OF PREPARING NIOBIUM AND/OR TANTALUM PENTACHLORIDES (OPTIONS) | 2004 |
|
RU2253620C1 |
METHOD OF OBTAINING HIGH PURITY MONOSILANE AND POLYCRYSTALLINE SILICON | 2006 |
|
RU2329196C1 |
CATALYST OF STEAM CONVERSION OF HYDROCARBONS, METHOD OF ITS PREPARATION AND METHOD OF STEAM CONVERSION OF HYDROCARBONS USING NAMED CATALYST | 2014 |
|
RU2549619C1 |
Authors
Dates
2012-03-27—Published
2010-07-26—Filed