SEMICONDUCTOR PHASE SHIFTER Russian patent published in 2012 - IPC H03C3/00 

FIELD: radio engineering.

SUBSTANCE: in a semiconductor phase shifter (SPS) comprising a three-phased series transformer, the secondary windings of which are connected into an inset of phases of a high-voltage power transmission line, a three-phased shunt transformer, the primary windings of which are connected as star, the low-voltage bushings are grounded, the high-voltage bushings are connected to terminals of the inset of phases of the high-voltage power transmission line at the side of the SPS input.

EFFECT: expanded range of control angles of a semiconductor phase shifter with preservation of a module of phase voltages of a power transmission line at the output of SPS as practically equal to the module of phase voltages of the line at the SPS input in the entire range of the specified control angles, the solution makes it possible to control the module of phase voltages of the line at the SPS output at any control angles, also at the zero one, decreasing or increasing it, whenever necessary, and therefore to stabilise it for a consumer in case of load drop or jump, keeping it within the limits prescribed by GOST.

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