LIGHT-EMITTING DEVICE HAVING FILTER (VERSIONS) Russian patent published in 2012 - IPC H01L33/00 

FIELD: physics.

SUBSTANCE: semiconductor structure includes a light-emitting region lying between an n-type region and a p-type region. Wavelength-converting material, which is formed so as to absorb a portion of first light emitted by said light-emitting region and emit a second light, lies on the path of the first light. The filter lies on the path of the first light in order to absorb or reflect a portion of the first light with input flux density higher than a given nonzero input flux density. According to the second version, the filter lies on the path of the first light and second light and is formed so as to absorb or reflect a portion of second light and transmit at least 50% of light incident on it; wherein wavelength-converting material lies between the semiconductor structure and the filter.

EFFECT: possibility of adjusting defined light temperature to a given value.

9 cl, 6 dwg