SEMICONDUCTOR LED WITH WAVELENGTH CONVERSION Russian patent published in 2015 - IPC H01L33/50 H01L33/64 

Abstract RU 2550753 C2

FIELD: physics, optics.

SUBSTANCE: device comprises semiconductor structure with light-emitting ply, luminescent material located on the path of light emitted by light emitting ply and thermal-contact material arranged in translucent material. Note here that thermal-contact material does not convert light-emitting ply light wavelength. Thermal-contact material features higher heat conductivity than that of translucent material. Thermal-contact material is located to dissipate heat from luminescence material. Thermal-contact material features the particle median size larger than 10 mcm. Thermal-contact material refraction ratio differs from that of translucent material by less than 10%.

EFFECT: ruled out undesirable shift of colour hue and reduction in light output.

20 cl, 6 dwg

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RU 2 550 753 C2

Authors

Sajmonian Dmitrij

Basin Grigorij

Dates

2015-05-10Published

2010-10-22Filed