METHOD OF PRODUCING HIGH-PURITY SYNTHETIC SILICON DIOXIDE Russian patent published in 2012 - IPC C01B33/12 

FIELD: chemistry.

SUBSTANCE: invention relates to chemical engineering of inorganic substances. The method of producing high-purity synthetic silicon dioxide involves reaction of the starting quartz-containing material with a fluoride, hydrofluoride of ammonium or mixture thereof to obtain ammonium silicofluoride and fluorides of impurity elements. The obtained ammonium silicofluoride is purified from metal impurities by sublimation. The ammonium silicofluoride solution in water is purified from non-metal impurities by extraction. Synthetic silicon dioxide is then precipitated from the ammonium silicofluoride solution using ammonia water.

EFFECT: obtaining high-purity synthetic silicon dioxide.

2 ex