METHOD FOR PRODUCING SYNTHETIC SILICON DIOXIDE OF HIGH PURITY Russian patent published in 2021 - IPC C01B33/12 

Abstract RU 2747934 C1

FIELD: chemistry.

SUBSTANCE: invention relates to a method for producing synthetic silicon dioxide of high purity. The method includes the interaction of quartz-containing raw materials with fluoride, ammonium hydrodifluoride or a mixture thereof, sublimation separation of ammonium silicofluoride for purification from metal impurities, trapping gaseous ammonium silicofluoride, its desublimation, dissolving ammonium silicofluoride in water, processing the solution with synthetic water followed by separation of ammonium dioxide. The purification of ammonium silicofluoride from impurities of non-metals is carried out at the stage of capturing gaseous ammonium silicofluoride through its desublimation at a temperature of 70-120°C.

EFFECT: reduced number of stages of the process.

1 cl, 5 ex

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RU 2 747 934 C1

Authors

Andreev Artem Andreevich

Dobrynin Andrei Valentinovich

Kantaev Aleksandr Sergeevich

Dates

2021-05-17Published

2020-10-15Filed