METHOD OF PRODUCING SILICON Russian patent published in 2012 - IPC C01B33/23 C01B33/29 

FIELD: chemistry.

SUBSTANCE: invention relates to chemical engineering of inorganic substances and can be used to produce synthetic silicon. The method involves mixing silicon dioxide with magnesium to obtain magnesium silicide, treating the magnesium silicide with mineral acid to obtain gaseous silicon monosilane and decomposition of the latter at 800-1000°C to obtain a solid product - elementary silicon. Magnesium silicide is obtained using magnesium metal from which metal and nonmetal impurities are removed via sublimation, and silicon oxide from which metal and nonmetal impurities are removed through an ammonium hexafluorosilicate formation step and deposition thereof with ammonia water.

EFFECT: obtaining silicon with low content of impurities, low cost of the end product is achieved due to exclusion of the silicon monosilane rectification step.

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