METHOD OF PRODUCING SEMICONDUCTOR NANOSTRUCTURE Russian patent published in 2012 - IPC H01L21/20 B82B3/00 

FIELD: chemistry.

SUBSTANCE: method of making a semiconductor nanostructure involves depositing a first semiconductor material onto a porous matrix, removing the porous matrix and depositing a second semiconductor material onto the obtained structure of the first semiconductor material. The porous matrix is formed via anodic oxidation until formation of an ordered structure of nanopores. The first and second semiconductor materials are deposited through vacuum evaporation. Compounds which are in the germanium isoelectronic sequence are deposited: germanium or gallium arsenide or zinc selenide or copper bromide. Thermal evaporation of the semiconductor material is carried out in an ultrahigh vacuum. The conducting base used is a metal. The conducting base is deposited via magnetron sputtering. The conducting base is deposited on two sides of the formed semiconductor nanostructure in form of a film. The porous matrix used is made from an oxide of a metal or non-metal.

EFFECT: method of forming nanocompsites and nanostructures based on semiconductor materials for future light sources, solar cells and photodetectors with ultrahigh spatial resolution.

12 cl, 12 dwg