METHOD OF FORMING NANODOTS ON CRYSTAL SURFACE Russian patent published in 2015 - IPC B82B3/00 

Abstract RU 2539757 C1

FIELD: nanotechnology.

SUBSTANCE: condensation is performed on the surface of material substrate intended for formation of nanodots, and in vacuum the cleavage of the single crystal is obtained, which is used as a substrate on which regularly located create point defects are created, for which the resist is applied on the substrate surface, then the substrate surface is exposed through the template with electromagnetic radiation, after which the irradiated areas of the resist are removed, then the substrate surface is irradiated with rigid electromagnetic radiation to form the point defects in the areas where the resist is removed, then the condensation of material intended to form nanodots is carried out to the substrate surface within the time tcr required for obtaining nanodots with the diameter dp, at that the substrate temperature is increased to a value a priori sufficient for providing the growth of nuclei of condensate on the created point defects and the absence of nuclei between these defects, after which the resist residues are removed.

EFFECT: providing the ability to create a simple and efficient technology of production of solid-state regularly arranged on the substrate of the nanoparticles of the required diameter of different metals and semiconductors, suitable for thermal evaporation, on the surface of any single crystal.

9 cl, dwg

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RU 2 539 757 C1

Authors

Astashova Elena Viktorovna

Titov Vasilij Petrovich

Omorokov Dmitrij Borisovich

Dolgikh Vasilij Alekseevich

Dates

2015-01-27Published

2013-07-04Filed