METHOD OF OBTAINING NANOSTRUCTURES OF SEMICONDUCTOR Russian patent published in 2010 - IPC B82B3/00 H01L21/20 

FIELD: nanotechnologies.

SUBSTANCE: invention refers to low-dimensional nanotechnology and fine materials and can be used for obtaining well-ordered massif of semiconductor nanoparticles based on mesaporous solid-phase matrixes. Essence of invention consists in the method for obtaining nanostructures of semiconductor including formation of porous matrix from oxides of metals or non-metals with further deposition of semiconductor materials to the matrix; matrix is formed by two-stage anodic oxidation of basic matrix material till well-ordered structure of nanopores is formed, and semiconductor is deposited to the matrix by vacuum evaporation; then to the filled matrix there applied is conductive base in the form of film with further removal of matrix. Invention provides improvement of the ability of obtaining well-ordered massifs of semiconductors both elementary, and being chemical compound, on the basis of mesaporous solid-phase matrixes.

EFFECT: possibility of simultaneous obtaining two types of nanostructures - quantum dots and nanohairs of material.

7 cl, 8 dwg, 1 tbl