DEVICE FOR STABILISING TEMPERATURE OF ELEMENTS OF MICROCIRCUITS AND MICROASSEMBLIES Russian patent published in 2012 - IPC G05D23/00 G05D23/30 H05B3/00 

Abstract RU 2461047 C1

FIELD: physics.

SUBSTANCE: invention can be used to maintain constancy of properties said devices in a wide range of ambient temperature. The precision electronic devices used can be microcircuits of different degree of integration, up to very-large-scale integration (VLSI), system-on-a-chip, and microassemblies. Temperature of microcircuits and microassemblies is controlled without convection, which enables to use a device for operation in deep space, particularly in space equipment for satellite systems. The device for stabilising temperature of elements of microcircuits and microassemblies has a conductor which is common for the entire device, a dielectric substrate having the shape of a rectangular parallelepiped and made from material with a high heat conduction coefficient, a temperature control circuit, having three leads, the first of which is connected to the common conductor, a temperature sensor connected to the second lead of the temperature control circuit, a blocking capacitor whose first lead is connected to the common conductor, and the second lead is connected to the third lead of the temperature control circuit, a heater which is in form of a rectangular resistive film, one end of which is connected to the common conductor, and the other end is connected to the second lead of the blocking capacitor; the resistive film of the heater lies on the entire back surface of the dielectric substrate; and the device additionally includes a temperature-controlled dielectric layer having a high heat conduction coefficient and having inside it elements of circuits and/or microassemblies lying on the entire working surface of the dielectric substrate, a first heat-insulating layer lying on the entire outer surface of the heater and a second heat-insulating layer lying on the outer surface of said temperature-controlled layer; and the temperature sensor lies on the outer surface of the second heat-insulating layer at its centre.

EFFECT: larger volume of the temperature-controlled dielectric layer having inside it elements of microcircuits or microassemblies, having insignificant temperature-control error in a wide range of ambient temperature.

14 dwg

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RU 2 461 047 C1

Authors

Kozlov Vitalij Grigor'Evich

Alekseev Valerij Pavlovich

Ozerkin Denis Vital'Evich

Kozlov Grigorij Vital'Evich

Dates

2012-09-10Published

2011-07-05Filed