FIELD: physics.
SUBSTANCE: solid-state image sensor, having photoelectric conversion elements, includes a first insulating film which is placed on a substrate and has openings on corresponding elements, insulator areas whose refraction index is higher than that of the first insulating film, and which lie in corresponding openings, a second insulating film which is placed on top surfaces of the insulator areas and the top surface of the first insulating film, and a third insulating film, whose refraction index is lower than that of the second insulating film, and which is in contact with the top surface of the second insulating film. The condition t<λ/n is satisfied, where λ is the wavelength of incident light, n is the refraction index of the second insulating film and t is the thickness of the second insulating film in at least part of the region on the top surface of the first insulating film.
EFFECT: reduced noise and high resolution.
8 cl, 10 dwg
