FIELD: physics, computer engineering.
SUBSTANCE: invention relates to a solid-state image sensor. The result is achieved due to that the solid-state image sensor comprises a pixel array in which a plurality of pixels are ordered in a matrix having a plurality of rows and a plurality of columns, wherein the pixel array includes a first wiring layer and a second wiring layer over the first wiring layer, the first wiring layer including first column signal lines located in corresponding columns of the pixel array, and the second wiring layer including second column signal lines located in corresponding columns of the pixel array.
EFFECT: preventing decrease of the aperture ratio of each pixel caused by increase in the number of wiring lines.
12 cl, 24 dwg
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