FIELD: electrical engineering.
SUBSTANCE: solid-state image sensor includes area of pixels and area of peripheral circuit which are placed on semiconductor substrate. Each pixel includes photoelectric converter and MOS gain-transistor of amplification which outputs signal corresponding to a charge of photoelectric converter to the vertical signal line. The area of peripheral circuit includes a circuit which control pixel or processes signal output to the vertical signal line. Resistance in the source area is of MOS gain-transistor is less than resistance in the sink area of MOS gain-transistor.
EFFECT: noise reduction and improvement of excitation in the pixel area of MOS gain-transistor.
11 cl, 10 dwg
