METHOD FOR QUANTITATIVE DETERMINATION OF CONTENT OF SILICON DIOXIDE ON SURFACE OF SILICON Russian patent published in 2012 - IPC G01N27/26 

FIELD: chemistry.

SUBSTANCE: method for quantitative determination of silicon dioxide on the surface of silicon involves selective etching of the analysed silicon sample with an aqueous comparison solution until complete dissolution of silicon dioxide on the silicon sample; placing the obtained solution into the first chamber of a potential cell separated from a second chamber; placing the comparison solution into the second chamber; measuring emf and determining molar amount of the analysed dioxide from a calibration curve. The potential cell has a membrane electrode assembly in form of a perforated proton-conducting membrane on whose two sides electrodes are deposited in form of porous platinum layers.

EFFECT: method provides simple and rapid quantitative determination of silicon dioxide on silicon.

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