METHOD OF PRODUCING SEMICONDUCTIVE SILICON Russian patent published in 1995 - IPC

Abstract RU 2035397 C1

FIELD: chemical technology. SUBSTANCE: sand with content of SiO₂ 30 wt. -% (not less) is treated with HF solution in the presence of concentrated H₂SO₄. Prepared SiF₄ is purified by freezing out at (-80)-(-90) C or by contacting with activated carbon. Then product is treated with deionized water, and formed fluosilicic acid is fed for interaction with atomic hydrogen. Product is used in solar battery. EFFECT: improved method of producing.

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RU 2 035 397 C1

Authors

Tereshin V.D.

Strebkov D.S.

Dates

1995-05-20—Published

1990-12-13—Filed