METHOD TO CONTROL RESISTANCE OF SOLID-STATE INSTRUMENTS AND RESISTIVE MATRIX OF MEMORY BASED ON POLE-DEPENDENT ELECTRIC MASS TRANSFER IN SILICON Russian patent published in 2012 - IPC H01L21/66 G01R31/28 H01L27/115 

FIELD: electricity.

SUBSTANCE: invention may be used to develop and repeatedly control resistance of metal links that connect electrodes of solid-state instruments, operation of which is based on a pole-dependent electric mass transfer in silicon (PEMT). The concept of the invention is as follows: the method to control resistance of solid-state instruments on the basis of PEMT makes it possible to control resistance of metal links, which connect electrodes of solid-state instruments, by an electric signal in the entire range of physically possible values of resistance, both towards reduction of resistance and towards increase of resistance with preservation of a set condition in a nonvolatile manner with higher resistance to external effects.

EFFECT: possibility to control resistance of a metal link in an instrument to the specified value in the entire range of physically possible values, possibility in each cell of a resistive memory matrix to carry out multiple recording, deletion and nonvolatile storage of information in a mixed system of numeration.

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