METHOD OF OBTAINMENT OF RESISTANCE STORAGE ELEMENT Russian patent published in 2015 - IPC H01L21/66 B82B3/00 

FIELD: electricity.

SUBSTANCE: method of resistance storage element production includes production of conducting electrodes at nonconducting substrate, deposition of metal film into the gap between electrodes and further thermal annealing of the film. During deposition and thermal annealing of the film its resistance is controlled, at that deposition is stopped when resistance reduces up to hundreds of kOhm and annealing is stopped when resistance increases sharply more than 106 times.

EFFECT: clear readiness monitoring operation during product manufacturing without control over the coating factor, simplifying manufacturing process and increasing productivity.

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