METHOD OF FORMING MEMRISTOR BASED ON SOLID-STATE ALLOY Si:Me AND MEMRISTOR STRUCTURE BASED ON SOLID-STATE ALLOY Si:Me Russian patent published in 2015 - IPC H01L21/8247 H01L27/115 

FIELD: physics.

SUBSTANCE: invention relates to microelectronics and specifically to a technique of producing an integrated logic element and/or nonvolatile memory based on metal-insulator-metal (MIM) structures. Since this step is critical for obtaining the necessary characteristics of MIM structures, the absence of said step enables to obtain large arrays of MIM structures with uniform parameters. The method of forming a memristor based on MIM structures includes forming an insulator layer from a solid-state alloy Si:Me, which is formed with a predetermined concentration profile of the metal Me on the thickness. To this end, the insulator is grown by successively depositing ultra-thin layers of Si and Me of different thickness to enable growth of concentration of Me and Si in the direction from the lower electrode to the upper electrode in the range of 1-25%. A memristor based on MIM structures is also formed.

EFFECT: obtaining a memristor which is characterised by absence of "moulding" during initial transition of the structure to a low-resistance state.

18 cl, 2 dwg, 1 ex