METHOD FOR OBTAINING ACTIVE LAYER OF NON-VOLATILE RESISTIVE MEMORY ELEMENT Russian patent published in 2024 - IPC G11C13/00 H10N70/00 

FIELD: computer technology.

SUBSTANCE: information storage technology, computer technology, in particular resistive memory elements. A method for producing an active layer of a non-volatile resistive memory element involves forming an active layer on a substrate, providing a filamentary conduction mechanism, from a silicon-based dielectric with a non-stoichiometric composition. In this case, a silicon-based dielectric layer with a non-stoichiometric composition SiO_xN_y with 0≤ x<2.0≤ y<4/3, and if x=0, then y>0, and if y=0, then x>0 is deposited onto the substrate. For deposition, modes are used that collectively ensure the production of a composition characterized by short-range order in the arrangement of atoms, described by the model of a disordered random network, with the implementation of control over the content of oxygen and/or nitrogen vacancies and dangling links of silicon, with the total obtaining of their content, which determines the shapeless existence of filaments of the active layer, which is initially in a working, open state.

EFFECT: achieving a hysteresis window, obtaining reversible resistive switching without performing the electrical forming process; reducing the current in the high-resistance state and, accordingly, increasing the ratio of resistance in the low-resistance and high-resistance state, as well in reducing energy consumption; improving the stability of switching modes of a non-volatile resistive memory element between two stable states corresponding to low-resistance and high-resistance resistances of the active layer.

5 cl, 6 dwg